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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 85V 67A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO252-3 0 2500 N-Channel - 85V 67A (Tc) 12.4 mOhm @ 67A, 10V 4V @ 83µA 64nC @ 10V 4340pF @ 40V 10V ±20V 125W (Tc)
IPD12CN10N G
Per Unit
$0.928
RFQ
8,600
In-stock
Infineon Technologies MOSFET N-CH 100V 67A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 100V 67A (Tc) 12.4 mOhm @ 67A, 10V 4V @ 83µA 65nC @ 10V 4320pF @ 50V 10V ±20V 125W (Tc)
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