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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.718
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RFQ
Infineon Technologies MOSFET N-CH 800V 7A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ P7 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 800V 7A (Tc) 750 mOhm @ 2.7A, 10V 3.5V @ 140µA 17nC @ 10V 460pF @ 500V 10V ±20V 51W (Tc)
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Per Unit
$0.756
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RFQ
Infineon Technologies MOSFET N-CH 950V 6A TO252 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ P7 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 950V 6A (Tc) 1.2 Ohm @ 2.7A, 10V 3.5V @ 140µA 15nC @ 10V 478pF @ 400V 10V ±20V 52W (Tc)
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