- Manufacture :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 650V 9A TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TO252-3 | 0 | 2500 | N-Channel | - | 650V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | 10V | ±20V | 83W (Tc) | |||
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3,500
In-stock
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Infineon Technologies | MOSFET N-CH 650V 6A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | - | 650V | 6A (Tc) | 660 mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | 10V | ±20V | 62.5W (Tc) | |||
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3,500
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 6A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | - | 650V | 6A (Tc) | 660 mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | 10V | ±20V | 62.5W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | Super Junction | 700V | 10.5A (Tc) | 600 mOhm @ 1A, 10V | 3.5V @ 0.21mA | 22nC @ 10V | 474pF @ 100V | 10V | ±20V | 86W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N CH 650V 11A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | MDmesh™ V | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 650V | 11A (Tc) | 340 mOhm @ 5.5A, 10V | 5V @ 250µA | 22nC @ 10V | 816pF @ 100V | 10V | ±25V | 85W (Tc) | |||
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2,500
In-stock
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Infineon Technologies | MOSFET N-CH 600V 9A TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ CP | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO252-3 | 0 | 2500 | N-Channel | - | 600V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | 10V | ±20V | 83W (Tc) |
