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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.353
RFQ
20,000
In-stock
onsemi MOSFET N-CH 800V 1A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 QFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D-PAK 0 2500 N-Channel - 800V 1A (Tc) 20 Ohm @ 500mA, 10V 5V @ 250µA 7.2nC @ 10V 195pF @ 25V 10V ±30V 2.5W (Ta), 45W (Tc)
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Per Unit
$0.390
RFQ
22,500
In-stock
onsemi MOSFET P-CH 200V 3.7A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 QFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D-PAK 0 2500 P-Channel - 200V 3.7A (Tc) 1.4 Ohm @ 1.85A, 10V 5V @ 250µA 13nC @ 10V 430pF @ 25V 10V ±30V 2.5W (Ta), 45W (Tc)
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