- Operating Temperature :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 500V 6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 300 | N-Channel | - | 500V | 6A (Tc) | 1.3 Ohm @ 3.7A, 10V | 5V @ 250µA | 34nC @ 10V | 1346pF @ 25V | 10V | ±20V | 119W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 300 | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 250V 14A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 300 | N-Channel | - | 250V | 14A (Tc) | 260 mOhm @ 8.4A, 10V | 5V @ 250µA | 35nC @ 10V | 810pF @ 25V | 10V | ±30V | 144W (Tc) |
