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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N CH 30V 80A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DeepGATE™, STripFET™ VI Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete TO-263 (D²Pak) 0 1000 N-Channel - 30V 80A (Tc) 3 mOhm @ 40A, 10V 2.5V @ 250µA 80nC @ 10V 3800pF @ 25V 5V, 10V ±20V 110W (Tc)
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STMicroelectronics MOSFET N-CH 40V 120A H2PAK-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DeepGATE™, STripFET™ VI Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete H2PAK-2 0 1000 N-Channel - 40V 120A (Tc) 2.2 mOhm @ 60A, 10V 1V @ 250µA (Min) 181nC @ 10V 8130pF @ 20V 5V, 10V ±20V 150W (Tc)
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$1.129
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RFQ
STMicroelectronics MOSFET N-CH 30V 80A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DeepGATE™, STripFET™ VI Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 2500 N-Channel - 30V 80A (Tc) 3 mOhm @ 40A, 10V 2.5V @ 250µA 80nC @ 5V 3800pF @ 25V 5V, 10V ±20V 110W (Tc)
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