- Manufacture :
- Packaging :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 300 | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | 330W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 800 | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | 330W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N CH 30V 80A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DeepGATE™, STripFET™ VI | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | TO-263 (D²Pak) | 0 | 1000 | N-Channel | - | 30V | 80A (Tc) | 3 mOhm @ 40A, 10V | 2.5V @ 250µA | 80nC @ 10V | 3800pF @ 25V | 5V, 10V | ±20V | 110W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 30V 80A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DeepGATE™, STripFET™ VI | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 2500 | N-Channel | - | 30V | 80A (Tc) | 3 mOhm @ 40A, 10V | 2.5V @ 250µA | 80nC @ 5V | 3800pF @ 25V | 5V, 10V | ±20V | 110W (Tc) | |||
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3,000
In-stock
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STMicroelectronics | MOSFET N-CH 30V 100A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | STripFET™ III | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 1000 | N-Channel | - | 30V | 100A (Tc) | 3.2 mOhm @ 50A, 10V | 2.5V @ 250µA | 88nC @ 5V | 6200pF @ 25V | 4.5V, 10V | ±16V | 300W (Tc) | |||
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1,600
In-stock
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onsemi | MOSFET N-CH 30V 93A TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-263AB | 0 | 800 | N-Channel | - | 30V | 19A (Ta), 93A (Tc) | 5.7 mOhm @ 35A, 10V | 2.5V @ 250µA | 67nC @ 10V | 2525pF @ 15V | 4.5V, 10V | ±20V | 80W (Tc) | |||
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1,600
In-stock
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Infineon Technologies | MOSFET N-CH 30V 260A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 30V | 260A (Tc) | 3 mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | 4.5V, 10V | ±20V | 330W (Tc) |
