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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101, CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Not For New Designs D²PAK (TO-263AB) 0 1000 N-Channel - 600V 16A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 1.1mA 43nC @ 10V 1520pF @ 100V 10V ±20V 139W (Tc)
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Infineon Technologies MOSFET N-CH 550V 17A TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO263-3-2 0 1000 N-Channel - 550V 17A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 660µA 45nC @ 10V 1800pF @ 100V 10V ±20V 139W (Tc)
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Infineon Technologies MOSFET N-CH 650V 16A TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs PG-TO263-3-2 0 1000 N-Channel - 650V 16A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 660µA 43nC @ 10V 1520pF @ 100V 10V ±20V 139W (Tc)
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