MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Package / Case	Series	Packaging	Technology	Mounting Type	Operating Temperature	Part Status	Supplier Device Package	Factory Stock	Minimum Quantity	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)
	IRLZ44ZSTRRPBF		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 55V 51A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	HEXFET®	Tape & Reel (TR)	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)	Obsolete	D2PAK	0	1600	N-Channel	-	55V	51A (Tc)	13.5 mOhm @ 31A, 10V	3V @ 250µA	36nC @ 5V	1620pF @ 25V	4.5V, 10V	±16V	80W (Tc)
	IRLZ44ZSPBF		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 55V 51A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	HEXFET®	Tube	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)		D2PAK	0	750	N-Channel	-	55V	51A (Tc)	13.5 mOhm @ 31A, 10V	3V @ 250µA	36nC @ 5V	1620pF @ 25V	4.5V, 10V	±16V	80W (Tc)
	IRLZ44ZS		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 55V 51A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	HEXFET®	Tube	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)	Obsolete	D2PAK	0	50	N-Channel	-	55V	51A (Tc)	13.5 mOhm @ 31A, 10V	3V @ 250µA	36nC @ 5V	1620pF @ 25V	4.5V, 10V	±16V	80W (Tc)
	IRLZ44ZSTRLPBF		GET PRICE	PDF RFQ	800 In-stock	Infineon Technologies	MOSFET N-CH 55V 51A D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	HEXFET®	Tape & Reel (TR)	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 175°C (TJ)	Active	D2PAK	0	800	N-Channel	-	55V	51A (Tc)	13.5 mOhm @ 31A, 10V	3V @ 250µA	36nC @ 5V	1620pF @ 25V	4.5V, 10V	±16V	80W (Tc)

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