- Manufacture :
- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 150A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 250 | N-Channel | - | 55V | 150A (Tc) | 4.9 mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | 10V | ±20V | 230W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 75V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 400 | N-Channel | - | 75V | 120A (Tc) | 6.3 mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 96A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 200 | N-Channel | - | 100V | 96A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 250W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 75V 130A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 75V | 130A (Tc) | 6.3 mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 250W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 74A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | P-Channel | - | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 150A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 55V | 150A (Tc) | 4.9 mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | 10V | ±20V | 230W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 75V 80A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 75V | 80A (Tc) | 7.1 mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | 4700pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 42A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 800 | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 170W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DeepGATE™, STripFET™ VII | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | H2PAK-2 | 0 | 1000 | N-Channel | - | 100V | 180A (Tc) | 2.5 mOhm @ 60A, 10V | 3.8V @ 250µA | 180nC @ 10V | 12800pF @ 25V | 10V | ±20V | 315W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 75V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 75V | 120A (Tc) | 6.3 mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 200W (Tc) | |||
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GET PRICE |
1,026
In-stock
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Infineon Technologies | MOSFET N-CH 100V 88A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 200W (Tc) | |||
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GET PRICE |
11,348
In-stock
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Infineon Technologies | MOSFET P-CH 55V 42A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D2PAK | 0 | 1 | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 170W (Tc) | |||
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GET PRICE |
2,400
In-stock
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Infineon Technologies | MOSFET N-CH 100V 88A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 800 | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 200W (Tc) | ||
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GET PRICE |
2,000
In-stock
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STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, DeepGATE™, STripFET™ VII | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | H2PAK-2 | 0 | 1000 | N-Channel | - | 100V | 180A (Tc) | 2.3 mOhm @ 60A, 10V | 4.5V @ 250µA | 180nC @ 10V | 12800pF @ 25V | 10V | ±20V | 315W (Tc) | ||
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GET PRICE |
24,800
In-stock
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Infineon Technologies | MOSFET P-CH 55V 42A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | 0 | 800 | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 170W (Tc) |
