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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 100A TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D²PAK (TO-263AB) 0 1000 N-Channel - 60V 100A (Tc) 4.7 mOhm @ 100A, 10V 4V @ 270µA 167nC @ 10V 6100pF @ 30V 10V ±20V 300W (Tc)
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Infineon Technologies MOSFET N-CH TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101, OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO263-3-2 0 1000 N-Channel - 80V 120A (Tc) 2.5 mOhm @ 100A, 10V 4V @ 223µA 167nC @ 10V 11550pF @ 25V 10V ±20V 278W (Tc)
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