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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 150V 27A D2-PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - D2PAK 0 0 P-Channel - 150V 27A (Tc) 150 mOhm @ 16A, 10V 5V @ 250µA 110nC @ 10V 2210pF @ 25V 10V ±20V 250W (Tc)
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Infineon Technologies MOSFET P-CH 150V 27A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Last Time Buy D2PAK 0 800 P-Channel - 150V 27A (Tc) 150 mOhm @ 16A, 10V 5V @ 250µA 110nC @ 10V 2210pF @ 25V 10V ±20V 250W (Tc)
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STMicroelectronics MOSFET N-CH 30V 85A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB STripFET™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -65°C ~ 175°C (TJ) Obsolete D2PAK 0 1000 N-Channel - 30V 85A (Tc) 8 mOhm @ 40A, 10V 1V @ 250µA 40nC @ 4.5V 2210pF @ 25V 4.5V, 10V ±16V 110W (Tc)
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