- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 800V 1.5A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | Super Junction | 800V | 1.5A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 200µA | 4nC @ 10V | 250pF @ 500V | 10V | ±20V | 13W (Tc) | |||
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STMicroelectronics | MOSFET N-CH 450V 1.5A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -65°C ~ 150°C (TJ) | Active | I-PAK | 0 | 1 | N-Channel | - | 450V | 1.5A (Tc) | 4.5 Ohm @ 500mA, 10V | 3.7V @ 250µA | 7nC @ 10V | 160pF @ 25V | 10V | ±30V | 30W (Tc) |
