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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 500V 3.1A TO-251 TO-251-3 Short Leads, IPak, TO-251AA CoolMOS™ CE Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO251-3 0 1500 N-Channel 500V 3.1A (Tc) 1.4 Ohm @ 900mA, 13V 3.5V @ 70µA 8.2nC @ 10V 178pF @ 100V 13V ±20V 42W (Tc)
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RFQ
1,995
In-stock
Infineon Technologies MOSFET COOLMOS 700V TO251-3 TO-251-3 Short Leads, IPak, TO-251AA CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO251-3 0 1 N-Channel 700V 6.5A (Tc) 750 mOhm @ 1.4A, 10V 3.5V @ 70µA 8.3nC @ 400V 306pF @ 400V 10V ±16V 34.7W (Tc)
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RFQ
1,500
In-stock
Infineon Technologies MOSFET N-CHANNEL 700V 4A IPAK TO-251-3 Short Leads, IPak, TO-251AA - Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO251-3 0 1 N-Channel 700V 4A (Tc) 2 Ohm @ 1A, 10V 3.5V @ 70µA 7.8nC @ 10V 163pF @ 100V 10V ±20V 42W (Tc)
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