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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 28A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 975 N-Channel - 55V 28A (Tc) 40 mOhm @ 17A, 10V 2V @ 250µA 25nC @ 5V 880pF @ 25V 4V, 10V ±16V 68W (Tc)
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Infineon Technologies MOSFET N-CH 55V 28A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 55V 28A (Tc) 40 mOhm @ 17A, 10V 2V @ 250µA 25nC @ 5V 880pF @ 25V 4V, 10V ±16V 68W (Tc)
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