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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 30V 35A IPAK TO-251-3 Short Leads, IPak, TO-251AA OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 0 1500 N-Channel 30V 35A (Tc) 10.5 mOhm @ 30A, 10V 2.2V @ 250µA 14nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V 38W (Tc)
IRFU9024N
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RFQ
46,520
In-stock
Infineon Technologies MOSFET P-CH 55V 11A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete IPAK (TO-251) 0 0 600 P-Channel 55V 11A (Tc) 175 mOhm @ 6.6A, 10V 4V @ 250µA 19nC @ 10V 350pF @ 25V 10V ±20V 38W (Tc)
IRFU9024NPBF
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RFQ
50,440
In-stock
Infineon Technologies MOSFET P-CH 55V 11A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active IPAK (TO-251) 0 0 1 P-Channel 55V 11A (Tc) 175 mOhm @ 6.6A, 10V 4V @ 250µA 19nC @ 10V 350pF @ 25V 10V ±20V 38W (Tc)
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RFQ
7,896
In-stock
onsemi MOSFET N-CH 60V 11A I-PAK TO-251-3 Short Leads, IPak, TO-251AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-251AA 46800 0 1 N-Channel 60V 11A (Tc) 107 mOhm @ 8A, 5V 3V @ 250µA 11.3nC @ 10V 350pF @ 25V 5V ±16V 38W (Tc)
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