- Series :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 500V 1.7A TO-251 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ CE | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO251-3 | 0 | 1500 | N-Channel | - | 500V | 1.7A (Tc) | 3 Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3nC @ 10V | 84pF @ 100V | 13V | ±20V | 26W (Tc) | ||||
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1,500
In-stock
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Infineon Technologies | MOSFET N-CH 800V 1.9A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | - | 800V | 1.9A (Tc) | 3.3 Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8nC @ 10V | 120pF @ 500V | 10V | ±20V | 18W (Tc) |