- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 80V 50A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO251-3 | 0 | 1500 | N-Channel | - | 80V | 50A (Tc) | 13.5 mOhm @ 50A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1730pF @ 40V | 6V, 10V | ±20V | 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 50A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO251-3 | 0 | 1500 | N-Channel | - | 80V | 50A (Tc) | 10.3 mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | 6V, 10V | ±20V | 100W (Tc) |
