Build a global manufacturer and supplier trusted trading platform.
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 40A TO-251-3 TO-251-3 Short Leads, IPak, TO-251AA OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 30V 40A (Tc) 9 mOhm @ 30A, 10V 2.2V @ 250µA 15nC @ 10V 1600pF @ 15V 4.5V, 10V ±20V 42W (Tc)
Default Photo
Per Unit
$1.510
VIEW
RFQ
Infineon Technologies MOSFET N-CH 800V COOLMOS TO251-3 TO-251-3 Short Leads, IPak, TO-251AA CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO251-3 0 1 N-Channel - 800V 6A (Tc) 900 mOhm @ 2.2A, 10V 3.5V @ 110µA 15nC @ 10V 350pF @ 500V 10V ±20V 45W (Tc)
Default Photo
Per Unit
$1.510
VIEW
RFQ
Infineon Technologies MOSFET N-CH 800V 6A TO251-3 TO-251-3 Short Leads, IPak, TO-251AA CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO251-3 0 1 N-Channel - 800V 6A (Tc) 900 mOhm @ 2.2A, 10V 3.5V @ 110µA 15nC @ 10V 350pF @ 500V 10V ±20V 45W (Tc)
Default Photo
Per Unit
$1.760
RFQ
480
In-stock
Infineon Technologies MOSFET N-CH 950V 6A TO251 TO-251-3 Short Leads, IPak, TO-251AA CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO251-3 0 1 N-Channel - 950V 6A (Tc) 1.2 Ohm @ 2.7A, 10V 3.5V @ 140µA 15nC @ 10V 478pF @ 400V 10V ±20V 52W (Tc)
Page 1 / 1