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Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.740
RFQ
1,417
In-stock
Infineon Technologies MOSFET N-CHANNEL 700V 6A TO251 TO-251-3 Short Leads, IPak, TO-251AA CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO251-3 0 1 N-Channel - 700V 6A (Tc) 900 mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8nC @ 10V 211pF @ 400V 10V ±16V 30.5W (Tc)
Default Photo
Per Unit
$0.740
RFQ
1,858
In-stock
Infineon Technologies MOSFET COOLMOS 700V TO251-3 TO-251-3 Short Leads, IPak, TO-251AA CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO251-3 0 1 N-Channel - 700V 6A (Tc) 900 mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8nC @ 400V 211pF @ 400V 10V ±16V 30.5W (Tc)
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