- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 700V 10.1A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1500 | N-Channel | - | 700V | 10.1A (Tc) | 650 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | 86W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 600V 4.3A TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ CE | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1500 | N-Channel | - | 600V | 4.3A (Tc) | 1 Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | 10V | ±20V | 61W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 600V 3.1A TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ CE | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1500 | N-Channel | - | 600V | 3.1A (Tc) | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | 49W (Tc) |