- Part Status :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 19A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Obsolete | TO-220AB Full-Pak | 0 | 50 | N-Channel | - | 55V | 19A (Tc) | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | 4.5V, 10V | ±20V | 39W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 14A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Obsolete | TO-220AB Full-Pak | 0 | 50 | P-Channel | - | 55V | 14A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 33W (Tc) | |||
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3,073
In-stock
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Infineon Technologies | MOSFET P-CH 55V 14A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | P-Channel | - | 55V | 14A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 33W (Tc) |
