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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 17A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 600 N-Channel - 55V 17A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 10V ±20V 3.8W (Ta), 45W (Tc)
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Infineon Technologies MOSFET N-CH 55V 17A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 55V 17A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 10V ±20V 3.8W (Ta), 45W (Tc)
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Infineon Technologies MOSFET N-CH 100V 17A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 350 N-Channel - 100V 17A (Tc) 90 mOhm @ 9A, 10V 4V @ 250µA 37nC @ 10V 920pF @ 25V 10V ±20V 3.8W (Ta), 70W (Tc)
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Infineon Technologies MOSFET N-CH 100V 17A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V 3.8W (Ta), 79W (Tc)
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