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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 20V 180A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 3200 N-Channel - 20V 180A (Tc) 4 mOhm @ 90A, 10V 3V @ 250µA 79nC @ 4.5V 5090pF @ 10V 4.5V, 10V ±20V 210W (Tc)
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Per Unit
$3.320
RFQ
487
In-stock
Infineon Technologies MOSFET NCH 300V 19A TO262 TO-262-3 Long Leads, I²Pak, TO-262AA Automotive, AEC-Q101, HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active TO-262-3 0 1 N-Channel - 300V 19A (Tc) 185 mOhm @ 11A, 10V 5V @ 150µA 57nC @ 10V 2340pF @ 25V 10V ±20V 210W (Tc)
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