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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 92A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 400 N-Channel - 20V 92A (Tc) 6 mOhm @ 15A, 10V 2.45V @ 250µA 24nC @ 4.5V 2150pF @ 10V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 20V 92A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 350 N-Channel - 20V 92A (Tc) 6 mOhm @ 15A, 10V 2.45V @ 250µA 24nC @ 4.5V 2150pF @ 10V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 30V 87A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 3200 N-Channel - 30V 87A (Tc) 6.3 mOhm @ 21A, 10V 2.25V @ 250µA 26nC @ 4.5V 2130pF @ 15V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 30V 87A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 400 N-Channel - 30V 87A (Tc) 6.3 mOhm @ 21A, 10V 2.25V @ 250µA 26nC @ 4.5V 2130pF @ 15V 4.5V, 10V ±20V 79W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 87A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 250 N-Channel - 30V 87A (Tc) 6.3 mOhm @ 21A, 10V 2.25V @ 250µA 26nC @ 4.5V 2130pF @ 15V 4.5V, 10V ±20V 79W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 87A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 250 N-Channel - 30V 87A (Tc) 6.3 mOhm @ 21A, 10V 2.25V @ 250µA 26nC @ 4.5V 2130pF @ 15V 4.5V, 10V ±20V 79W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 20V 92A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 250 N-Channel - 20V 92A (Tc) 6 mOhm @ 15A, 10V 2.45V @ 250µA 24nC @ 4.5V 2150pF @ 10V 4.5V, 10V ±20V 79W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 20V 92A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 250 N-Channel - 20V 92A (Tc) 6 mOhm @ 15A, 10V 2.45V @ 250µA 24nC @ 4.5V 2150pF @ 10V 4.5V, 10V ±20V 79W (Tc)
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