- Packaging :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A 5X6 PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) | 0 | 1 | N-Channel | - | 30V | 27A (Ta), 120A (Tc) | 3.1 mOhm @ 20A, 10V | 2.35V @ 50µA | 41nC @ 10V | 3180pF @ 10V | 4.5V, 10V | ±20V | 3.6W (Ta), 59W (Tc) | |||
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862,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 50A 5X6 PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PQFN (5x6) | 0 | 4000 | N-Channel | - | 30V | 27A (Ta), 120A (Tc) | 3.1 mOhm @ 20A, 10V | 2.35V @ 50µA | 41nC @ 10V | 3180pF @ 10V | 4.5V, 10V | ±20V | 3.6W (Ta), 59W (Tc) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 27A PQFN5X6 | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (5x6) | 0 | 4000 | N-Channel | - | 30V | 27A (Ta), 50A (Tc) | 2.95 mOhm @ 20A, 10V | 2.2V @ 50µA | 59nC @ 10V | 3610pF @ 10V | 4.5V, 10V | ±20V | 3.6W (Ta), 59W (Tc) |
