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Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 100A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs PG-TDSON-8 0 5000 N-Channel - 100V 13.4A (Ta), 100A (Tc) 7.9 mOhm @ 50A, 10V 4V @ 110µA 87nC @ 10V 5900pF @ 50V 10V ±20V 156W (Tc)
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Infineon Technologies MOSFET N-CH 100V 90A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 100V 11.4A (Ta), 90A (Tc) 10 mOhm @ 25A, 10V 4V @ 110µA 44nC @ 10V 2900pF @ 50V 10V ±20V 156W (Tc)
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