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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
BSZ019N03LSATMA1
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8,000
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Infineon Technologies MOSFET N-CH 30V 22A TSDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8-FL 0 5000 N-Channel - 30V 22A (Ta). 40A (Tc) 1.9 mOhm @ 20A, 10V 2V @ 250µA 44nC @ 10V 2800pF @ 15V 4.5V, 10V ±20V 2.1W (Ta), 69W (Tc)
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Infineon Technologies MOSFET N-CH 30V 100A 8TDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 30V 28A (Ta), 100A (Tc) 1.9 mOhm @ 30A, 10V 2.2V @ 250µA 44nC @ 10V 2800pF @ 15V 4.5V, 10V ±20V 2.5W (Ta), 69W (Tc)
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Infineon Technologies MOSFET N-CH 100V 90A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 100V 11.4A (Ta), 90A (Tc) 10 mOhm @ 25A, 10V 4V @ 110µA 44nC @ 10V 2900pF @ 50V 10V ±20V 156W (Tc)
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