Build a global manufacturer and supplier trusted trading platform.
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 30V 11A 3X3 PQFN 8-PowerTDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (3x3) 0 1 P-Channel - 30V 11A (Ta), 24A (Tc) 10 mOhm @ 11A, 20V 2.4V @ 25µA 48nC @ 10V 1543pF @ 25V 10V, 20V ±25V 2.8W (Ta)
Default Photo
VIEW
RFQ
Texas instruments MOSFET P-CH 20V 60A 8-SON 8-PowerTDFN NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-VSON-CLIP (3.3x3.3) 0 2500 P-Channel - 20V 14A (Ta), 60A (Tc) 11.7 mOhm @ 10A, 4.5V 1.2V @ 250µA 12.3nC @ 4.5V 1400pF @ 10V 2.5V, 4.5V ±12V 2.8W (Ta)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 30V 11A 8-PQFN 8-PowerTDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PQFN (3x3) 0 4000 P-Channel - 30V 11A (Ta), 24A (Tc) 10 mOhm @ 11A, 20V 2.4V @ 25µA 48nC @ 10V 1543pF @ 25V 10V, 20V ±25V 2.8W (Ta)
Page 1 / 1