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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
2SK2917
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RFQ
4,200
In-stock
Toshiba MOSFET N-CH 500V 18A TO-3PN TO-3P-3, SC-65-3 - Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-3P(N)IS 0 0 50 N-Channel - 500V 18A (Ta) 270 mOhm @ 10A, 10V 4V @ 1mA 80nC @ 10V 3720pF @ 10V 10V ±30V 90W (Tc)
2SK2847(F)
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RFQ
8,755
In-stock
Toshiba MOSFET N-CH 900V 8A TO-3PN TO-3P-3, SC-65-3 - Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-3P(N)IS 0 0 50 N-Channel - 900V 8A (Ta) 1.4 Ohm @ 4A, 10V 4V @ 1mA 58nC @ 10V 2040pF @ 25V 10V ±30V 85W (Tc)
K12J60U
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RFQ
14,360
In-stock
Toshiba MOSFET N-CH 600V 12A TO-3PN TO-3P-3, SC-65-3 DTMOSII Bulk MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-3P(N) 0 0 1 N-Channel - 600V 12A (Ta) 400 mOhm @ 6A, 10V 5V @ 1mA 14nC @ 10V 720pF @ 10V 10V ±30V 144W (Tc)
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RFQ
5,085
In-stock
onsemi MOSFET N-CH 300V TO-3 TO-3P-3, SC-65-3 UniFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-3PN 54900 0 1 N-Channel - 300V 38A (Tc) 85 mOhm @ 19A, 10V 5V @ 250µA 60nC @ 10V 2600pF @ 25V 10V ±30V 312W (Tc)
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