- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
11,109
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 510 mA | 990 mOhms | 1 V | 0.5 nC | Enhancement | ||
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GET PRICE |
12,010
In-stock
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Diodes Incorporated | MOSFET 30V N-CH MOSFET | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 650 mA | 760 mOhms | 0.95 V | 0.7 nC | Enhancement | ||
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GET PRICE |
19,640
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 1 Ohms | - 1 V | 0.8 nC | Enhancement | ||
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GET PRICE |
4,547
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 5 Ohms | - 1 V | 0.4 nC | Enhancement | ||
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GET PRICE |
3,950
In-stock
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Diodes Incorporated | MOSFET 12 P-Ch Enh FET 8 VGS 55.4pF 0.84nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 20 mA | 800 mOhms | - 1 V | 0.84 nC | Enhancement | ||
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GET PRICE |
5,298
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 900 mOhms | - 400 mV | 0.7 nC | Enhancement | ||
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GET PRICE |
14,635
In-stock
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Diodes Incorporated | MOSFET 12V N-Ch Enh FET 8 VGS 60pF 0.92nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 200 mA | 366 mOhms | 1 V | 0.96 nC | Enhancement | ||
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GET PRICE |
9,935
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 8 VGS 52.5pF 0.88nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 600 mA | 450 mOhms | 1 V | 0.88 nC | Enhancement | ||
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GET PRICE |
240,000
In-stock
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Diodes Incorporated | MOSFET 25V P-Ch Enh FET 360pD -25Vdss -8Vgss | - 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 166 mA | 10 Ohms | - 0.9 V | 0.35 nC | Enhancement | ||
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VIEW | Diodes Incorporated | MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.63W | X2-DFN0806-3 | Reel | 1 Channel | Si | N-Channel |
