- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
6,176
In-stock
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Toshiba | MOSFET UFM S-MOS Pd: 0.8W F: 1MHz | 10 V | SMD/SMT | UFM-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 1 mA | 28 mOhms | 13.6 nC | ||||||
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GET PRICE |
2,121
In-stock
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Toshiba | MOSFET Vds=-30V Id=-2A 3Pin | +/- 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 225 mOhms | - 1.2 V | Enhancement | |||
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GET PRICE |
2,370
In-stock
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Toshiba | MOSFET Small-signal FET 24.8 nC -4.4A -20V | UFM-3 | Reel | Si | ||||||||||||||
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GET PRICE |
2,389
In-stock
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Toshiba | MOSFET Small-signal MOSFET P-Channel | +/- 8 V | SMD/SMT | UFM-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 24.9 mOhms | - 1 V | 12.8 nC | Enhancement | |||
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GET PRICE |
2,550
In-stock
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Toshiba | MOSFET Small-signal MOSFET High Speed Switching | UFM-3 | Reel | Si | ||||||||||||||
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GET PRICE |
2,584
In-stock
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Toshiba | MOSFET Vds=20V Id=1.2A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 390 mOhms | Enhancement | ||||
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GET PRICE |
6,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID -5.4A, VDSS -12V | +/- 6 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.4 A | 14 mOhms | - 1 V | 33 nC | Enhancement | ||
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GET PRICE |
70,000
In-stock
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Toshiba | MOSFET Small Signal Mosfet | +/- 10 V | UFM-3 | Reel | 1 Channel | Si | N-Channel, SBD | 20 V | 3.2 A | |||||||||
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VIEW | Toshiba | MOSFET Small-signal FET 1.2A 20V 0.53Ohm | UFM-3 | Reel | Si | |||||||||||||||
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VIEW | Toshiba | MOSFET Small-signal FET 0.137Ohm -4.6A -20V | UFM-3 | Reel | Si | |||||||||||||||
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VIEW | Toshiba | MOSFET Single P-ch 20V 4.4A | UFM-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.4 A | 25.8 mOhms | ||||||||||
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GET PRICE |
1,096
In-stock
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Toshiba | MOSFET Vds=-30V Id=-1.1A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.1 A | 610 mOhms | Enhancement | ||||
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VIEW | Toshiba | MOSFET Vds=30V Id=2.4A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.4 A | 88 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=30V Id=2.2A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.2 A | 95 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=20V Id=3.2A 3Pin | 10 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 75 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-30V Id=-1.4A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.4 A | 360 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-4A 3Pin | 8 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 60 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2A 3Pin | 8 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 175 mOhms | Enhancement | |||||
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GET PRICE |
15
In-stock
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Toshiba | MOSFET Vds=-20V Id=-1.7A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.7 A | 189 mOhms | Enhancement | ||||
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VIEW | Toshiba | MOSFET Vds=20V Id=3A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3 A | 70 mOhms | Enhancement |
