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14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,792
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V Symmetrical Dual Common Source | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 21 A | 32 mOhms | 3.1 V | 11 nC | PowerTrench Power Clip | |||||
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5,095
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC | 16 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 88 A | 9.9 mOhms | 2.5 V | 44 nC | ||||||
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3,247
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 14.9 mOhms | 2 V to 4 V | 40 nC | Enhancement | |||||
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6,236
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 9 mOhms | 2 V to 4 V | 65 nC | Enhancement | |||||
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4,000
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 58A 13.5 mOhm, 58 nC Qg | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 13.5 mOhms | 58 nC | StrongIRFET | |||||||||
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1,224
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 100 V | 3.2 A | 92 mOhms | 4 V | 17 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 46 A | 18 mOhms | 24 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12.4 mOhms | 48 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 100V DUAL N-CH HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.3 A | 195 mOhms | 3 V | 4.2 nC | ||||||
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2,294
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 36 nC | Enhancement | StrongIRFET | ||||
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2,335
In-stock
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IR / Infineon | MOSFET HEXFET 100V N CHANNEL | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 8 mOhms | 3.6 V | 26 nC | Enhancement | StrongIRFET | ||||
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3,645
In-stock
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IR / Infineon | MOSFET HEXFET 100V N CHANNEL | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 16.4 mOhms | 3.6 V | 13 nC | Enhancement | StrongIRFET | ||||
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1,503
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 34 A | 16.4 mOhms | 2 V | 13 nC | Enhancement | |||||
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736
In-stock
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IR / Infineon | MOSFET HEXFET 100V N CHANNEL | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 105 A | 6 mOhms | 3.6 V | 33 nC | Enhancement | StrongIRFET |