- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,792
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 14.4 mOhms | 4 V | 23 nC | ||||
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GET PRICE |
79,600
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.4mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.4 mOhms | 39 nC | |||||||
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GET PRICE |
9,900
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC | 12 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | 0.8 V | 41 nC | ||||
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GET PRICE |
4,000
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC | 12 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 40 A | 2.5 mOhms | 0.5 V to 1.1 V | 52 nC | Enhancement | |||
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GET PRICE |
764
In-stock
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IR / Infineon | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3.4 mOhms | 1.6 V | 20 nC | ||||
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GET PRICE |
70
In-stock
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Infineon Technologies | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.6 V | 55 nC | FastIRFet |
