- Manufacture :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,402
In-stock
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IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 84 A | 4.6 mOhms | 3 V | 44 nC | Enhancement | ||||
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3,988
In-stock
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IR / Infineon | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 70 A | 5.9 mOhms | 3 V | 40 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 100V DUAL N-CH HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.3 A | 195 mOhms | 3 V | 4.2 nC |