- Manufacture :
- Number of Channels :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,458
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 11 A | 16.3 mOhms | 1.8 V | 15 nC | |||||
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3,416
In-stock
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Infineon Technologies | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.6 mOhms | 1.8 V | 111 nC | StrongIRFET | ||||
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2,667
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.8 mOhms | 1.8 V | 31 nC | Enhancement | ||||
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41,120
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 120 A | 4.6 mOhms | 1.8 V | 41 nC | |||||
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4,000
In-stock
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Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 11.2 mOhms | 1.8 V | 15 nC | SmallPowIR | ||||
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2,962
In-stock
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Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 7.7 mOhms | 1.8 V | 20 nC | SmallPowIR | ||||
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3,988
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 12.8mOhms 4.7nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.2 A | 19.9 mOhms | 1.8 V | 10 nC | |||||
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3,377
In-stock
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IR / Infineon | MOSFET 25V 12nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 19 A | 6.7 mOhms | 1.8 V | 18 nC | SmallPowIR | ||||
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943
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 1.85mOhms 37nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.85 mOhms | 1.8 V | 77 nC | |||||
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8,900
In-stock
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IR / Infineon | MOSFET 30V SINGLE N-CH 4.1mOhms 14nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 6.3 mOhms | 1.8 V | 31 nC | |||||
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1,385
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 5mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 82 A | 7.2 mOhms | 1.8 V | 32 nC | |||||
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2,611
In-stock
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Infineon Technologies | MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1.8 V | 10 nC | SmallPowIR | ||||
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2,503
In-stock
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IR / Infineon | MOSFET 30V 5nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 14.5 mOhms | 1.8 V | 5.4 nC | SmallPowIR | ||||
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4,015
In-stock
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Infineon Technologies | MOSFET 25V 7.3nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 16 A | 10.3 mOhms | 1.8 V | 7.7 nC | SmallPowIR | ||||
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3,502
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.8mOhms 7.3nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.7 mOhms | 1.8 V | 7.3 nC | |||||
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55
In-stock
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IR / Infineon | MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 5.7 mOhms | 1.8 V | 13 nC | Enhancement |
