- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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13,000
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.4mOhms 5.4nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 29 A | 17.9 mOhms | 1.35 V to 2.35 V | 5.4 nC | Enhancement | ||||
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2,503
In-stock
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IR / Infineon | MOSFET 30V 5nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 14.5 mOhms | 1.8 V | 5.4 nC | SmallPowIR | ||||
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5
In-stock
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IR / Infineon | MOSFET MOSFT 30V 12A 12.4mOhm 5.4nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 12.4 mOhms | 5.4 nC | Enhancement |
