- Vgs - Gate-Source Voltage :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,730
In-stock
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Texas instruments | MOSFET 100V, 49mOhm SON2x2 NexFET Power MOSFET 6-WSON ... | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 58 mOhms | 2.8 V | 5.6 nC | Enhancement | NexFET | |||||
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1,393
In-stock
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Texas instruments | MOSFET 30 V Dual N-Channel NexFET Power MOSFETs | 20 V, 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 5.0 A | 27 mOhms, 27 mOhms | 1.2 V, 1.2 V | 6 nC, 6 nC | Enhancement | NexFET | |||||
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326
In-stock
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Texas instruments | MOSFET 100V, 49mOhm NexFET Power MOSFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||||
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520
In-stock
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Texas instruments | MOSFET 30V, N-Channel NexFET Power Mosfet | - 8 V, + 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 42 mOhms | 900 mV | 2.1 nC | Enhancement | NexFET | |||||
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1,204
In-stock
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Texas instruments | MOSFET Automotive 30-V N-Channel NexFET? Power MOSFET 6-WS... | 10 V, 8 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | AEC-Q100 | 1 Channel | Si | N-Channel | 30 V | 5 A | 24 mOhms | 1.3 V | 2.1 nC | Enhancement | NexFET | ||||
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9,000
In-stock
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Texas instruments | MOSFET CSD85301Q2 Dual N- Channel Power MOSFET | 10 V, 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 8 A | 23 mOhms, 23 mOhms | 600 mV, 600 mV | 5.4 nC, 5.4 nC | Enhancement | NexFET | |||||
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GET PRICE |
29,980
In-stock
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Texas instruments | MOSFET 30V Dual N-Ch Common Drain NexFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.0 A | 42 mOhms | 1.6 V | 2.2 nC | Enhancement | NexFET |