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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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7,416
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IR / Infineon | MOSFET MOSFT DUAL N/PCh 30V 2.4A Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 2.7 A | 200 mOhms | 7.8 nC, 7.5 nC | Enhancement | |||
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902
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Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 2.4A Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 2.4 A | 135 mOhms | 7.8 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 3.2 mOhms | 28 nC | Directfet | ||||||
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VIEW | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 10.9 mOhms | 9.2 nC |
