- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
4,553
In-stock
|
Toshiba | MOSFET P-Ch FET RDS 33mohm IDSS -10uA VDS -20V | SMD/SMT | VS6-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 150 mOhms | Enhancement | |||||
|
|
GET PRICE |
779
In-stock
|
Toshiba | MOSFET N-Ch -30V FET 2.2W -4.5A 510pF | VS6-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.5 A | 77 mOhms | |||||||
|
|
VIEW | Toshiba | MOSFET N-Ch -20V FET 690pF -5A 2.2W | VS6-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5 A | 85 mOhms | ||||||||
|
|
GET PRICE |
1,182
In-stock
|
Toshiba | MOSFET N-Ch 20V FET 6A 2.2W 630pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 20 V | 6 A | 38 mOhms | |||||||
|
|
VIEW | Toshiba | MOSFET N-Ch 40V FET 5.3A 2.2W 225pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 40 V | 5.3 A | 98 mOhms | ||||||||
|
|
VIEW | Toshiba | MOSFET N-Ch 60V FET 6.1A 2.2W 640pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 60 V | 6.1 A | 63 mOhms | ||||||||
|
|
VIEW | Toshiba | MOSFET N-Ch 30V FET 5.9A 2.2W 232pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 74 mOhms | ||||||||
|
|
GET PRICE |
899
In-stock
|
Toshiba | MOSFET N-Ch 30V FET 6A 2.2W 640pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 32 mOhms | |||||||
|
|
VIEW | Toshiba | MOSFET MOSFET P-Ch 12V 5.5A | 8 V | SMD/SMT | VS6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.5 A | 35 mOhms | Enhancement |
