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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode
TK15X60U(TE24L,Q)
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RFQ
Toshiba MOSFET MOSFET DTMOS-II N-Ch 600V 15A 30 V SMD/SMT TFP-4 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 15 A 300 mOhms Enhancement
TK20X60U(TE24L,Q)
VIEW
RFQ
Toshiba MOSFET MOSFET DTMOS-II N-Ch 600V 20A 30 V SMD/SMT TFP-4 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 20 A 190 mOhms Enhancement
TK12X60U(TE24L,Q)
VIEW
RFQ
Toshiba MOSFET MOSFET DTMOS-II N-Ch 600V 12A 30 V SMD/SMT TFP-4 - 50 C + 150 C Reel 1 Channel Si N-Channel 600 V 12 A 400 mOhms Enhancement
2SK3842(TE24L,Q)
VIEW
RFQ
Toshiba MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm 20 V SMD/SMT TFP-4 - 55 C + 150 C Reel 1 Channel Si N-Channel 60 V 75 A 5.8 mOhms Enhancement
2SK3387(TE24L,Q)
VIEW
RFQ
Toshiba MOSFET N-ch 150V 18A 0.08 ohm 20 V SMD/SMT TFP-4 - 55 C + 150 C Reel 1 Channel Si N-Channel 150 V 18 A 120 mOhms Enhancement
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