- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,193
In-stock
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Toshiba | MOSFET N-Ch Sm Sig FET Id 3.5A 20V 12VGSS | 12 V | SMD/SMT | TSM-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 70 mOhms | 1 V | 4.8 nC | |||||
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1,857
In-stock
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Toshiba | MOSFET N-Ch Sm Sig FET Id 5.0A 20V 8VGSS | SMD/SMT | TSM-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 5 A | 33 mOhms | 1 V | 14.8 nC | ||||||
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VIEW | Toshiba | MOSFET Singel N-ch 30V 2.9A | 20 V | SMD/SMT | TSM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.9 A | 83 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch FET U-MOSIV 4.5V Drive 60V 2.5A | TSM-3 | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 107 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET N-Ch FET 3-Pin 4.5V 30V 6A | TSM-3 | 1 Channel | Si | N-Channel | 30 V | 6 A | 27.6 mOhms |
