- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
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Toshiba | MOSFET N-Ch MOS 2A 600V 60W 280pF 3.4 Ohm | PW-Mold-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.3 Ohms | |||||||
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VIEW | Toshiba | MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm | 20 V | SMD/SMT | PW-Mold-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5 A | 170 mOhms | Enhancement | |||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm | 30 V | SMD/SMT | PW-Mold-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 1 A | 20 Ohms | Enhancement |
