- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,209
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | |||
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GET PRICE |
4,309
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10.5 A | 9.3 mOhms | 500 mV | 45.6 nC | Enhancement | |||
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1,979
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10.5 A | 8.4 mOhms | 500 mV | 25.8 nC | Enhancement | |||
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GET PRICE |
10,000
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | PowerDI |
