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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,668
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET VL Gate 1.0V | 12 V | SMD/SMT | U-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 900 mA | 350 mOhms | 450 mV | 500 pC | Enhancement | ||
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110,000
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET VL Gate 1.0V | U-DFN1212-3 | Reel | 1 Channel | Si | N-Channel |
