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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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GET PRICE |
3,150
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ | 20 V | SMD/SMT | DirectFET-SQ | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 8.5 mOhms | 11 nC | ||||||
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GET PRICE |
1,442
In-stock
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Infineon Technologies | MOSFET 25V SINGLE N-CH 20V VGS HEXFET | 20 V | SMD/SMT | DirectFET-SQ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 17 A | 6.7 mOhms | 1.9 V | 12 nC | Directfet | ||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ | 20 V | SMD/SMT | DirectFET-SQ | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 9.3 mOhms | 11.7 nC |
