- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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4,634
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Infineon Technologies | MOSFET N-Ch 600V 11.3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.3 A | 360 mOhms | 4 V | 22 nC | CoolMOS | ||
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53,920
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.2A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.2 A | 1 Ohms | 3 V | 15 nC | CoolMOS | ||
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2,360
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.7 A | 650 mOhms | 4 V | 12 nC | CoolMOS | ||
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3,149
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 2.3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.3 A | 2.1 Ohms | 3 V | 6.7 nC | CoolMOS | ||
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2,065
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6.7 A | 650 mOhms | 3 V | 21 nC | CoolMOS | ||
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602
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3 A | 1.5 Ohms | 3 V | 11 nC | CoolMOS | ||
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6,538
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3 A | 1.5 Ohms | 3 V | 9.4 nC | CoolMOS |
