- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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GET PRICE |
4,330
In-stock
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Toshiba | MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm | 12 V | SMD/SMT | WCSP6C-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 5 A | 26 mOhms | - 1.2 V | 9.8 nC | ||
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GET PRICE |
3,000
In-stock
|
Toshiba | MOSFET WCSP6C S-MOS TRSTR Pd=0mW F=1MHz | 4.5 V | SMD/SMT | WCSP6C-6 | Reel | 1 Channel | Si | N-Channel | 12 V | 7 A | 14.4 mOhms | 5.4 nC |
