- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,623
In-stock
|
Diodes Incorporated | MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF | 8 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6.6 A | 25 mOhms | Enhancement | ||||||
|
2,576
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -20Vdss -40A | +/- 8 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.6 A | 19 mOhms | - 1 V | 29 nC | Enhancement | ||||
|
4,915
In-stock
|
Diodes Incorporated | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF | 20 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 3 V | 12.3 nC | Enhancement | ||||
|
3,307
In-stock
|
Diodes Incorporated | MOSFET 20V N-Ch Enh FET 0.61W 1788pF 21.5nC | 10 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9 A | 14 mOhms | 0.9 V | 21.5 nC | Enhancement |