1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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STMicroelectronics | MOSFET N-CH 650V 5.4A I2PAKFP | TO-262-3 Full Pack, I²Pak | SuperMESH3™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | I2PAKFP (TO-281) | 0 | 1 | N-Channel | - | 650V | 5.4A (Tc) | 1.3 Ohm @ 2.7A, 10V | 4.5V @ 50µA | 33nC @ 10V | 880pF @ 50V | 10V | ±30V | 30W (Tc) |
